Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage

R. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, Y. Zhang. Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 1-8, IEEE, 2022. [doi]

Abstract

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