R. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, Y. Zhang. Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 1-8, IEEE, 2022. [doi]
@inproceedings{ZhangLLPEDZ22,
title = {Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage},
author = {R. Zhang and J. Liu and Q. Li and S. Pidaparthi and A. Edwards and C. Drowley and Y. Zhang},
year = {2022},
doi = {10.1109/IRPS48227.2022.9764569},
url = {https://doi.org/10.1109/IRPS48227.2022.9764569},
researchr = {https://researchr.org/publication/ZhangLLPEDZ22},
cites = {0},
citedby = {0},
pages = {1-8},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7950-9},
}