Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 66-1, IEEE, 2022. [doi]
Abstract is missing.