Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology

N. H. Lee, S. Lee, S. H. Kim, G. J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae. Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 6, IEEE, 2022. [doi]

Abstract

Abstract is missing.