M. Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán. 4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 103-106, IEEE, 2013. [doi]
@inproceedings{AlexandruBGVM13,
title = {4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits},
author = {M. Alexandru and Viorel Banu and Philippe Godignon and Miquel Vellvehí and José Millán},
year = {2013},
doi = {10.1109/ESSDERC.2013.6818829},
url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818829},
researchr = {https://researchr.org/publication/AlexandruBGVM13},
cites = {0},
citedby = {0},
pages = {103-106},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
publisher = {IEEE},
}