4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

M. Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán. 4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 103-106, IEEE, 2013. [doi]

Abstract

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