Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors

Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye. Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

@inproceedings{AlghamdiCSY18,
  title = {Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors},
  author = {Sami Alghamdi and Wonil Chung and Mengwei Si and Peide D. Ye},
  year = {2018},
  doi = {10.1109/DRC.2018.8442218},
  url = {https://doi.org/10.1109/DRC.2018.8442218},
  researchr = {https://researchr.org/publication/AlghamdiCSY18},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-3028-0},
}