Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter

Saleh S. Alharbi, Salah S. Alharbi, Mohammad Matin. Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter. In 2018 IEEE International Conference on Electro/Information Technology, EIT 2018, Rochester, MI, USA, May 3-5, 2018. pages 384-389, IEEE, 2018. [doi]

Authors

Saleh S. Alharbi

This author has not been identified. Look up 'Saleh S. Alharbi' in Google

Salah S. Alharbi

This author has not been identified. Look up 'Salah S. Alharbi' in Google

Mohammad Matin

This author has not been identified. Look up 'Mohammad Matin' in Google