Saleh S. Alharbi, Salah S. Alharbi, Mohammad Matin. Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter. In 2018 IEEE International Conference on Electro/Information Technology, EIT 2018, Rochester, MI, USA, May 3-5, 2018. pages 384-389, IEEE, 2018. [doi]
@inproceedings{AlharbiAM18,
title = {Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter},
author = {Saleh S. Alharbi and Salah S. Alharbi and Mohammad Matin},
year = {2018},
doi = {10.1109/EIT.2018.8500116},
url = {https://doi.org/10.1109/EIT.2018.8500116},
researchr = {https://researchr.org/publication/AlharbiAM18},
cites = {0},
citedby = {0},
pages = {384-389},
booktitle = {2018 IEEE International Conference on Electro/Information Technology, EIT 2018, Rochester, MI, USA, May 3-5, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5398-2},
}