Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies

Roberto B. Almeida, C. M. Marques, Paulo F. Butzen, Fabio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt. Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. Microelectronics Reliability, 88:196-202, 2018. [doi]

@article{AlmeidaMBSRM18,
  title = {Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies},
  author = {Roberto B. Almeida and C. M. Marques and Paulo F. Butzen and Fabio G. R. G. da Silva and Ricardo A. L. Reis and Cristina Meinhardt},
  year = {2018},
  doi = {10.1016/j.microrel.2018.07.134},
  url = {https://doi.org/10.1016/j.microrel.2018.07.134},
  researchr = {https://researchr.org/publication/AlmeidaMBSRM18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {88},
  pages = {196-202},
}