Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies - researchr publication

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Roberto B. Almeida, C. M. Marques, Paulo F. Butzen, Fabio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt. Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. Microelectronics Reliability, 88:196-202, 2018. [doi]

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