Muhammad Alshahed, M. Dakran, L. Heuken, M. Alomari, Joachim N. Burghartz. Comprehensive compact electro-thermal GaN HEMT model. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 196-199, IEEE, 2017. [doi]
@inproceedings{AlshahedDHAB17,
title = {Comprehensive compact electro-thermal GaN HEMT model},
author = {Muhammad Alshahed and M. Dakran and L. Heuken and M. Alomari and Joachim N. Burghartz},
year = {2017},
doi = {10.1109/ESSDERC.2017.8066625},
url = {https://doi.org/10.1109/ESSDERC.2017.8066625},
researchr = {https://researchr.org/publication/AlshahedDHAB17},
cites = {0},
citedby = {0},
pages = {196-199},
booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
publisher = {IEEE},
isbn = {978-1-5090-5978-2},
}