Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology

K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, T. S. Low, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, D. C. D'Avanzo. Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology. Microelectronics Reliability, 47(8):1175-1179, 2007. [doi]

Abstract

Abstract is missing.