Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

D. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. Microelectronics Reliability, 46(9-11):1597-1602, 2006. [doi]

This author has not been identified. Look up 'D. Alvarez' in GoogleThis author has not been identified. Look up 'M. J. Abou-Khalil' in GoogleThis author has not been identified. Look up 'C. Russ' in GoogleThis author has not been identified. Look up 'Kiran V. Chatty' in GoogleThis author has not been identified. Look up 'Robert Gauthier' in GoogleThis author has not been identified. Look up 'D. Kontos' in GoogleThis author has not been identified. Look up 'J. Li' in GoogleThis author has not been identified. Look up 'C. Seguin' in GoogleThis author has not been identified. Look up 'R. Halbach' in Google

runs on WebDSL