Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant

D. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. Microelectronics Reliability, 46(9-11):1597-1602, 2006. [doi]

@article{AlvarezARCGKLSH06,
  title = {Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant},
  author = {D. Alvarez and M. J. Abou-Khalil and C. Russ and Kiran V. Chatty and Robert Gauthier and D. Kontos and J. Li and C. Seguin and R. Halbach},
  year = {2006},
  doi = {10.1016/j.microrel.2006.07.041},
  url = {http://dx.doi.org/10.1016/j.microrel.2006.07.041},
  tags = {analysis, C++},
  researchr = {https://researchr.org/publication/AlvarezARCGKLSH06},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {46},
  number = {9-11},
  pages = {1597-1602},
}