Salvatore M. Amoroso, Louis Gerrer, Stanislav Markov, Fikru Adamu-Lema, Asen Asenov. Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 109-112, IEEE, 2012. [doi]
Abstract is missing.