Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Junjie An, Shengdong Hu. Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss. IEEE Access, 7:28592-28596, 2019. [doi]

Abstract

Abstract is missing.