Deeksha Anandani, Anurag Kumar, V. S. Kanchana Bhaaskaran. Gating techniques for 6T SRAM cell using different modes of FinFET. In Jaime Lloret Mauri, Sabu M. Thampi, Michal Wozniak, Oge Marques, Dilip Krishnaswamy, Sartaj Sahni, Christian Callegari, Hideyuki Takagi, Zoran S. Bojkovic, Vinod M., Neeli R. Prasad, Jose M. Alcaraz Calero, Joal Rodrigues, Xinyu Que, Natarajan Meghanathan, Ravi Sandhu, Edward Au, editors, 2015 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2015, Kochi, India, August 10-13, 2015. pages 483-487, IEEE, 2015. [doi]
@inproceedings{AnandaniKB15,
title = {Gating techniques for 6T SRAM cell using different modes of FinFET},
author = {Deeksha Anandani and Anurag Kumar and V. S. Kanchana Bhaaskaran},
year = {2015},
doi = {10.1109/ICACCI.2015.7275655},
url = {http://dx.doi.org/10.1109/ICACCI.2015.7275655},
researchr = {https://researchr.org/publication/AnandaniKB15},
cites = {0},
citedby = {0},
pages = {483-487},
booktitle = {2015 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2015, Kochi, India, August 10-13, 2015},
editor = {Jaime Lloret Mauri and Sabu M. Thampi and Michal Wozniak and Oge Marques and Dilip Krishnaswamy and Sartaj Sahni and Christian Callegari and Hideyuki Takagi and Zoran S. Bojkovic and Vinod M. and Neeli R. Prasad and Jose M. Alcaraz Calero and Joal Rodrigues and Xinyu Que and Natarajan Meghanathan and Ravi Sandhu and Edward Au},
publisher = {IEEE},
isbn = {978-1-4799-8792-4},
}