Gating techniques for 6T SRAM cell using different modes of FinFET

Deeksha Anandani, Anurag Kumar, V. S. Kanchana Bhaaskaran. Gating techniques for 6T SRAM cell using different modes of FinFET. In Jaime Lloret Mauri, Sabu M. Thampi, Michal Wozniak, Oge Marques, Dilip Krishnaswamy, Sartaj Sahni, Christian Callegari, Hideyuki Takagi, Zoran S. Bojkovic, Vinod M., Neeli R. Prasad, Jose M. Alcaraz Calero, Joal Rodrigues, Xinyu Que, Natarajan Meghanathan, Ravi Sandhu, Edward Au, editors, 2015 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2015, Kochi, India, August 10-13, 2015. pages 483-487, IEEE, 2015. [doi]

Abstract

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