2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS - researchr publication authors

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Toke Meyer Andersen, Florian Krismer, Johann W. Kolar, Thomas Toifl, Christian Menolfi, Lukas Kull, Thomas Morf, Marcel A. Kossel, Matthias Braendli, Peter Buchmann, Pier Andrea Francese. 2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 90-91, IEEE, 2014. [doi]

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