2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS

Toke Meyer Andersen, Florian Krismer, Johann W. Kolar, Thomas Toifl, Christian Menolfi, Lukas Kull, Thomas Morf, Marcel A. Kossel, Matthias Braendli, Peter Buchmann, Pier Andrea Francese. 2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 90-91, IEEE, 2014. [doi]

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