Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs - researchr publication authors

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Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Kentaro Chikamatsu, Ken Nakahara. Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs. In IEEE International Conference on Industrial Technology, ICIT 2019, Melbourne, Australia, February 13-15, 2019. pages 550-555, IEEE, 2019. [doi]

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