Raf Appeltans, Stefan Cosemans, Praveen Raghavan, Diederik Verkest, Liesbet Van der Perre, Wim Dehaene. STT-MRAM cell design with partial source line planes: improving the trade-off between area and series resistance. In IEEE Non-Volatile Memory System and Applications Symposium, NVMSA 2015, Hong Kong, China, August 19-21, 2015. pages 1-6, IEEE, 2015. [doi]
Abstract is missing.