New insight for next generation SRAM: tunnel FET versus FinFET for different topologies - researchr publication authors

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Adriana Arevalo, Romain Liautard, Daniel Romero, Lionel Trojman, Luis-Miguel Procel. New insight for next generation SRAM: tunnel FET versus FinFET for different topologies. In João Antonio Martino, Marcelo Lubaszewski, Matteo Sonza Reorda, editors, Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019, Sao Paulo, Brazil, August 26-30, 2019. pages 11, ACM, 2019. [doi]

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