Adriana Arevalo, Romain Liautard, Daniel Romero, Lionel Trojman, Luis-Miguel Procel. New insight for next generation SRAM: tunnel FET versus FinFET for different topologies. In João Antonio Martino, Marcelo Lubaszewski, Matteo Sonza Reorda, editors, Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019, Sao Paulo, Brazil, August 26-30, 2019. pages 11, ACM, 2019. [doi]
@inproceedings{ArevaloLRTP19,
title = {New insight for next generation SRAM: tunnel FET versus FinFET for different topologies},
author = {Adriana Arevalo and Romain Liautard and Daniel Romero and Lionel Trojman and Luis-Miguel Procel},
year = {2019},
doi = {10.1145/3338852.3339871},
url = {https://doi.org/10.1145/3338852.3339871},
researchr = {https://researchr.org/publication/ArevaloLRTP19},
cites = {0},
citedby = {0},
pages = {11},
booktitle = {Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019, Sao Paulo, Brazil, August 26-30, 2019},
editor = {João Antonio Martino and Marcelo Lubaszewski and Matteo Sonza Reorda},
publisher = {ACM},
isbn = {978-1-4503-6844-5},
}