A. V. Arun, P. S. Sreelekshmi, Jobymol Jacob. Design and analysis of dopingless 1T DRAM using work function engineered tunnel field effect transistors. Microelectronics Journal, 124:105433, 2022. [doi]
@article{ArunSJ22,
title = {Design and analysis of dopingless 1T DRAM using work function engineered tunnel field effect transistors},
author = {A. V. Arun and P. S. Sreelekshmi and Jobymol Jacob},
year = {2022},
doi = {10.1016/j.mejo.2022.105433},
url = {https://doi.org/10.1016/j.mejo.2022.105433},
researchr = {https://researchr.org/publication/ArunSJ22},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {124},
pages = {105433},
}