TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs - researchr publication authors

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Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88:604-609, 2018. [doi]

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