Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88:604-609, 2018. [doi]
@article{AsllaniFCMP18,
title = {TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs},
author = {Besar Asllani and Asad Fayyaz and Alberto Castellazzi and Hervé Morel and Dominique Planson},
year = {2018},
doi = {10.1016/j.microrel.2018.06.047},
url = {https://doi.org/10.1016/j.microrel.2018.06.047},
researchr = {https://researchr.org/publication/AsllaniFCMP18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {604-609},
}