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Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, A. Marcuzzi, Carlo De Santi, Matteo Meneghini. Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 54, IEEE, 2024. [doi]

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