Multilevel operation in oxide based resistive RAM with SET voltage modulation

Hassen Aziza, Haithem Ayari, Santhosh Onkaraiah, Mathieu Moreau, Jean Michel Portal, Marc Bocquet. Multilevel operation in oxide based resistive RAM with SET voltage modulation. In 2016 International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2016, Istanbul, Turkey, April 12-14, 2016. pages 1-5, IEEE, 2016. [doi]

@inproceedings{AzizaAOMPB16,
  title = {Multilevel operation in oxide based resistive RAM with SET voltage modulation},
  author = {Hassen Aziza and Haithem Ayari and Santhosh Onkaraiah and Mathieu Moreau and Jean Michel Portal and Marc Bocquet},
  year = {2016},
  doi = {10.1109/DTIS.2016.7483892},
  url = {http://dx.doi.org/10.1109/DTIS.2016.7483892},
  researchr = {https://researchr.org/publication/AzizaAOMPB16},
  cites = {0},
  citedby = {0},
  pages = {1-5},
  booktitle = {2016 International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2016, Istanbul, Turkey, April 12-14, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-0336-5},
}