K. Murali Chandra Babu, Ekta Goel. Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor. In IEEE International Symposium on Smart Electronic Systems, iSES 2022, Warangal, India, December 18-22, 2022. pages 651-653, IEEE, 2022. [doi]
@inproceedings{BabuG22-0,
title = {Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor},
author = {K. Murali Chandra Babu and Ekta Goel},
year = {2022},
doi = {10.1109/iSES54909.2022.00144},
url = {https://doi.org/10.1109/iSES54909.2022.00144},
researchr = {https://researchr.org/publication/BabuG22-0},
cites = {0},
citedby = {0},
pages = {651-653},
booktitle = {IEEE International Symposium on Smart Electronic Systems, iSES 2022, Warangal, India, December 18-22, 2022},
publisher = {IEEE},
isbn = {979-8-3503-9922-6},
}