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Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor

K. Murali Chandra Babu, Ekta Goel. Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor. In IEEE International Symposium on Smart Electronic Systems, iSES 2022, Warangal, India, December 18-22, 2022. pages 651-653, IEEE, 2022. [doi]

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