Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition - researchr publication authors

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Albert G. Baca, B. A. Klein, A. M. Armstrong, A. A. Allerman, E. A. Douglas, T. R. Fortune, R. J. Kaplar. Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-4, IEEE, 2019. [doi]

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