The electron irradiation effects on silicon gate dioxide used for power MOS devices

M. Badila, Philippe Godignon, J. Millán, S. Berberich, G. Brezeanu. The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability, 41(7):1015-1018, 2001. [doi]

Authors

M. Badila

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Philippe Godignon

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J. Millán

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S. Berberich

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G. Brezeanu

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