M. Badila, Philippe Godignon, J. Millán, S. Berberich, G. Brezeanu. The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability, 41(7):1015-1018, 2001. [doi]
@article{BadilaGMBB01,
title = {The electron irradiation effects on silicon gate dioxide used for power MOS devices},
author = {M. Badila and Philippe Godignon and J. Millán and S. Berberich and G. Brezeanu},
year = {2001},
doi = {10.1016/S0026-2714(01)00060-9},
url = {http://dx.doi.org/10.1016/S0026-2714(01)00060-9},
researchr = {https://researchr.org/publication/BadilaGMBB01},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {41},
number = {7},
pages = {1015-1018},
}