A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain

Srimanta Baishya, Abhijit Mallik, Chandan Kumar Sarkar. A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain. Microelectronics Reliability, 48(1):17-22, 2008. [doi]

Abstract

Abstract is missing.