Noise Modeling Including Effect of propagation along the gate of a field-effect transistor - researchr publication authors

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Moez Balti, Abdelaziz Samet, Daniel Pasquet, Emmanuelle Bourdel. Noise Modeling Including Effect of propagation along the gate of a field-effect transistor. In 12th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2005, Gammarth, Tunisia, December 11-14, 2005. pages 1-4, IEEE, 2005. [doi]

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