Noise Modeling Including Effect of propagation along the gate of a field-effect transistor

Moez Balti, Abdelaziz Samet, Daniel Pasquet, Emmanuelle Bourdel. Noise Modeling Including Effect of propagation along the gate of a field-effect transistor. In 12th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2005, Gammarth, Tunisia, December 11-14, 2005. pages 1-4, IEEE, 2005. [doi]

@inproceedings{BaltiSPB05,
  title = {Noise Modeling Including Effect of propagation along the gate of a field-effect transistor},
  author = {Moez Balti and Abdelaziz Samet and Daniel Pasquet and Emmanuelle Bourdel},
  year = {2005},
  doi = {10.1109/ICECS.2005.4633408},
  url = {http://dx.doi.org/10.1109/ICECS.2005.4633408},
  researchr = {https://researchr.org/publication/BaltiSPB05},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {12th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2005, Gammarth, Tunisia, December 11-14, 2005},
  publisher = {IEEE},
  isbn = {978-9972-61-100-1},
}