Byeong-jun Bang, Hyun-jeong Kwon, Young-Hwan Kim, Kyoung-Rok Cho, Hi-Seok Kim. Statistical Modeling of Read Static Noise Margin for 6-Transistor SRAM cell. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-4, IEEE, 2019. [doi]
Abstract is missing.