Simulation study of single event effects in the SiC LDMOS with a step compound drift region

Mengtian Bao, Ying Wang, Xingji Li, Chaoming Liu, Cheng-Hao Yu, Fei Cao. Simulation study of single event effects in the SiC LDMOS with a step compound drift region. Microelectronics Reliability, 91:170-178, 2018. [doi]

Abstract

Abstract is missing.