Giacomo Barletta, Giuseppe Currò. Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectronics Reliability, 45(5-6):994-999, 2005. [doi]
@article{BarlettaC05,
title = {Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS},
author = {Giacomo Barletta and Giuseppe Currò},
year = {2005},
doi = {10.1016/j.microrel.2004.11.008},
url = {http://dx.doi.org/10.1016/j.microrel.2004.11.008},
researchr = {https://researchr.org/publication/BarlettaC05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {5-6},
pages = {994-999},
}