Static Noise Margin based Yield Modelling of 6T SRAM for Area and Minimum Operating Voltage Improvement using Recovery Techniques

Nidhi Batra, Pawan Sehgal, Shashwat Kaushik, Mohammad S. Hashmi, Sudesh Bhalla, Anuj Grover. Static Noise Margin based Yield Modelling of 6T SRAM for Area and Minimum Operating Voltage Improvement using Recovery Techniques. In Ayse Kivilcim Coskun, Martin Margala, Laleh Behjat, Jie Han, editors, Proceedings of the 26th edition on Great Lakes Symposium on VLSI, GLVLSI 2016, Boston, MA, USA, May 18-20, 2016. pages 117-120, ACM, 2016. [doi]

Abstract

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