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Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt. Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectronics Reliability, 53(6):867-871, 2013. [doi]

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