Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions - researchr publication authors

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S. Van Beek, Koen Martens, Philippe Roussel, G. Donadio, J. Swerts, Sofie Mertens, G. Kar, T. Min, Guido Groeseneken. Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 4, IEEE, 2015. [doi]

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