S. Van Beek, Koen Martens, Philippe Roussel, G. Donadio, J. Swerts, Sofie Mertens, G. Kar, T. Min, Guido Groeseneken. Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 4, IEEE, 2015. [doi]
@inproceedings{BeekMRDSMKMG15,
title = {Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions},
author = {S. Van Beek and Koen Martens and Philippe Roussel and G. Donadio and J. Swerts and Sofie Mertens and G. Kar and T. Min and Guido Groeseneken},
year = {2015},
doi = {10.1109/IRPS.2015.7112818},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112818},
researchr = {https://researchr.org/publication/BeekMRDSMKMG15},
cites = {0},
citedby = {0},
pages = {4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}