Failure analysis of hot-electron effect on power RF N-LDMOS transistors - researchr publication authors

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Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline. Failure analysis of hot-electron effect on power RF N-LDMOS transistors. In 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Tunis, Tunisia, May 16-18, 2012. pages 1-6, IEEE, 2012. [doi]

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