Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline. Failure analysis of hot-electron effect on power RF N-LDMOS transistors. In 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Tunis, Tunisia, May 16-18, 2012. pages 1-6, IEEE, 2012. [doi]
@inproceedings{BelaidGDE12,
title = {Failure analysis of hot-electron effect on power RF N-LDMOS transistors},
author = {Mohamed Ali Belaïd and M. Gares and K. Daoud and Philippe Eudeline},
year = {2012},
doi = {10.1109/DTIS.2012.6232981},
url = {https://doi.org/10.1109/DTIS.2012.6232981},
researchr = {https://researchr.org/publication/BelaidGDE12},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Tunis, Tunisia, May 16-18, 2012},
publisher = {IEEE},
isbn = {978-1-4673-1926-3},
}