On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier

Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier. Mathematics and Computers in Simulation, 183:198-207, 2021. [doi]

Authors

Luigi Di Benedetto

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Gian Domenico Licciardo

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Alfredo Rubino

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