Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier. Mathematics and Computers in Simulation, 183:198-207, 2021. [doi]
@article{BenedettoLR21, title = {On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier}, author = {Luigi Di Benedetto and Gian Domenico Licciardo and Alfredo Rubino}, year = {2021}, doi = {10.1016/j.matcom.2020.07.008}, url = {https://doi.org/10.1016/j.matcom.2020.07.008}, researchr = {https://researchr.org/publication/BenedettoLR21}, cites = {0}, citedby = {0}, journal = {Mathematics and Computers in Simulation}, volume = {183}, pages = {198-207}, }