Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier. Mathematics and Computers in Simulation, 183:198-207, 2021. [doi]
@article{BenedettoLR21,
title = {On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier},
author = {Luigi Di Benedetto and Gian Domenico Licciardo and Alfredo Rubino},
year = {2021},
doi = {10.1016/j.matcom.2020.07.008},
url = {https://doi.org/10.1016/j.matcom.2020.07.008},
researchr = {https://researchr.org/publication/BenedettoLR21},
cites = {0},
citedby = {0},
journal = {Mathematics and Computers in Simulation},
volume = {183},
pages = {198-207},
}