F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectronics Reliability, 52(9-10):2159-2163, 2012. [doi]
@article{BerthetGGBTPG12,
title = {Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence},
author = {F. Berthet and Y. Guhel and H. Gualous and B. Boudart and J. L. Trolet and M. Piccione and C. Gaquière},
year = {2012},
doi = {10.1016/j.microrel.2012.07.007},
url = {http://dx.doi.org/10.1016/j.microrel.2012.07.007},
researchr = {https://researchr.org/publication/BerthetGGBTPG12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {9-10},
pages = {2159-2163},
}